Electronic device

ABSTRACT

An electronic device including a first substrate, an isolating layer, a porous structure, and a light conversion unit is provided. The isolating layer is disposed on the first substrate and has an opening. The porous structure is disposed in the opening and has a plurality of pores arranged irregularly. The light conversion unit is disposed in the pores of the porous structure. The electronic device of the disclosure has ideal quality.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of China patent applicationserial no. 201910767880.8, filed on Aug. 20, 2019. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND Technical Field

The disclosure relates to an electronic device, and particularly relatesto an electronic device having a light conversion unit.

Description of Related Art

With the rapid development of electronic products, there are more andmore demands for electronic devices. In order to improve the quality ofthe electronic devices, materials with improved light conversionfunctions have been continuously introduced into the electronic devices.

SUMMARY

The disclosure is directed to an electronic device which has a lightconversion unit and can provide improved light output effect.

An embodiment of the disclosure provides an electronic device includinga first substrate, an isolating layer, a porous structure, and a lightconversion unit. The isolating layer is disposed on the first substrateand has an opening. The porous structure is disposed in the opening andhas a plurality of pores arranged irregularly. The light conversion unitis disposed in the pores of the porous structure.

An embodiment of the disclosure provides an electronic device includinga substrate, a light conversion layer and a light-emitting unit. Thelight conversion layer is disposed on the substrate, and the lightconversion layer includes a porous structure and a light conversionunit, where the porous structure has a plurality of pores, and the lightconversion unit is dispersed in the pores. The light-emitting unit isdisposed between the light conversion layer and the substrate.

Based on the above descriptions, in the electronic device of thedisclosure, the light conversion unit is disposed in the porousstructure, by which the light conversion unit may provide improved lightconversion properties to improve the quality of the electronic device.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments of thedisclosure and, together with the description, serve to explain theprinciples of the disclosure.

FIG. 1A to FIG. 1H are schematic diagrams of a partial manufacturingprocess of an electronic device according to an embodiment of thedisclosure.

FIG. 1I is a schematic diagram of a part of components of an electronicdevice according to another embodiment of the disclosure.

FIG. 2A to FIG. 2E are schematic diagrams of a partial manufacturingprocess of an electronic device according to another embodiment of thedisclosure.

FIG. 3 is a structural schematic diagram of an electronic deviceaccording to an embodiment of the disclosure.

FIG. 4 is a structural schematic diagram of an electronic deviceaccording to another embodiment of the disclosure.

FIG. 5 is a structural schematic diagram of an electronic deviceaccording to still another embodiment of the disclosure.

FIG. 6 is a structural schematic diagram of an electronic deviceaccording to yet another embodiment of the disclosure.

FIG. 7 is a structural schematic diagram of an electronic deviceaccording to still another embodiment of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

In the disclosure, a situation that one structure (or layer, component,substrate) is located on another structure (layer, component, substrate)may refer to that the two structures are located adjacent to each otherand in direct connection, or refer to that the two structures areadjacent to each other but in indirect connection, and the indirectconnection refers to that there is at least one intermediate structure(or intermediate layer, intermediate component, intermediate substrate,intermediate interval) between the two structures, where a lower surfaceof one structure is adjacent to or directly connected to an uppersurface of the intermediate structure, and an upper surface of the otherstructure is adjacent to or directly connected to a lower surface of theintermediate structure, and the intermediate structure may be composedof a single-layer or multi-layer solid structure or non-solid structure,which is not limited by the disclosure.

Electrical connections or couplings described in the disclosure may allrefer to direct connections or indirect connections. In the case of thedirect connection, terminals of components on two circuits are directlyconnected or connected to each other by a conductive line. In the caseof the indirect connection, there are other components between theterminals of the components on the two circuits, such as switches,diodes, capacitors, inductors, resistors, other suitable components, ora combination of the above components.

In the disclosure, thicknesses, lengths, and widths may be measured byusing an optical microscope or obtained from an image measured by anelectron microscope, but the disclosure is not limited thereto.Moreover, the terms “about”, “approximately”, and “mostly” generallyindicate to be within a range of 20%, or a range of 10%, or a range of5%, or a range of 3%, or a range of 2%, or a range of 1%, or a range of0.5% of a given value. A given quantity is an approximate quantity,i.e., the meanings of “about”, “approximately”, and “mostly” may stillbe implied without specifying “about”, “approximately” and “mostly”.

Reference will now be made in detail to the present embodiments of thedisclosure, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

FIG. 1A to FIG. 1H are schematic diagrams of a partial manufacturingprocess of an electronic device according to an embodiment of thedisclosure. In FIG. 1A, a color filter (CF) unit 120 and a lowrefractive index layer 130 are disposed on a first substrate 110. Thefirst substrate 110 may be a rigid substrate or a flexible substrate,such as a transparent plastic substrate or a glass substrate. Forexample, a material of the first substrate 110 includes glass, quartz,sapphire, ceramic, polycarbonate (PC), polyimide (PI), and polyethyleneterephthalate (PET), rubber, fiberglass, other suitable substratematerials, or a combination of the above materials, but the disclosureis not limited thereto. The color filter unit 120 may include aplurality of color filter patterns 122 and a black matrix (BM) 124. Theblack matrix 124 is a grid pattern with openings, and the color filterpatterns 122 are respectively filled in the openings of the gridpattern. The color filter patterns 122 may include a red filter pattern122A, a green filter pattern 122B, and a blue filter pattern 122C, butthe disclosure is not limited thereto. The low refractive index layer130 may cover the color filter unit 120, such that the color filter unit120 is located between the first substrate 110 and the low refractiveindex layer 130. The low refractive index layer 130 may improve a lightutilization rate, and a range of a refractive index thereof may be, forexample, 1 to 1.45 (1<refractive index≤1.45), or 1.15 to 1.4(1.15≤refractive index≤1.4), and a material of the low refractive indexlayer 130 may include, for example, a polymer mixture containing siliconbeads, but the disclosure is not limited thereto. A thickness of the lowrefractive index layer 130 may be about 50 nanometers (nm) to 200 nm (50nm≤thickness≤200 nm), but the disclosure is not limited thereto. In someembodiments, the thickness of the low refractive index layer 130 may bethe maximum thickness of the low refractive index layer 130 in a normaldirection of the first substrate 110 in a partial cross-sectional viewof the electronic device. In other embodiments, the low refractive indexlayer 130 may be selectively omitted or only corresponds to a part ofthe color filter patterns 122.

In FIG. 1B, an isolating layer 140 is further formed on the firstsubstrate 110. The isolating layer 140 has openings 142, where theisolating layer 140 may be overlapped with the black matrix 124 in thenormal direction of the first substrate 110, and the opening 142 of theisolating layer 140 may correspond to one of the color filter patterns122. A thickness of the isolating layer 140 may be from 1 micrometer(micrometer, μm) to 100 μm (1 μm≤thickness≤100 μm). In some embodiments,the thickness of the isolating layer 140 may be the maximum thickness ofthe isolating layer 140 in the normal direction of the first substrate110 in a partial cross-sectional view of the electronic device. In someembodiments, a width of the isolating layer 140 may be less than orequal to a width of the black matrix 124, but the disclosure is notlimited thereto. In some embodiments, the width of the isolating layer140 (or the black matrix 124) may be the maximum width of the isolatinglayer 140 (or the black matrix 124) in a direction perpendicular to thenormal direction of the first substrate 110 in a partial cross-sectionalview of the electronic device, or may be the maximum width of theisolating layer 140 (or the black matrix 124) in a directionperpendicular to a partial extending direction of the isolating layer140 (or the black matrix 124) in a partial top view of the electronicdevice. Moreover, the isolating layer 140 may have a function ofreducing light penetration, and an optical density (an OD value) thereofis, for example, greater than 2, but the disclosure is not limitedthereto. In some embodiments, the isolating layer 140 may have areflection property, and for example, has a white color. Therefore, theisolating layer 140 may reflect light to improve a light utilizationrate. In other embodiments, the isolating layer 140 may have a blackcolor or other colors, but the disclosure it is not limited thereto.

In FIG. 1C, a preposed material P150 is coated on the first substrate110. The preposed material P150 may be filled in the openings 142, and athickness of the preposed material P150 may be equal to or slightlyhigher than the thickness of the isolating layer 140, but the disclosureis not limited thereto. The preposed material P150, for example,includes a polymer material, inorganic nanoparticles and a solvent,where the polymer material, for example, includes polyimide (PI),polymethylmethacrylate (PMMA), epoxy resin, etc., but the disclosure isnot limited thereto. After the preposed material P150 is coated, ayellow light process or a dry etching process may be selectivelyperformed to remove the preposed material P150 exceeding a top surfaceT140 of the isolating layer 140, as shown in FIG. 1D. In this way, thetop surface T140 of the isolating layer 140 may be exposed, andsubstantially no preposed material P150 is left on the top surface T140of the isolating layer 140. Namely, the preposed materials P150 in theopenings 142 are not connected to each other. In some embodiments, inthe step of removing the preposed material P150 exceeding the topsurface T140 of the isolating layer 140, a part of the isolating layer140 is possibly removed, so that an overall thickness of the isolatinglayer 140 may be slightly reduced. It should be noted that in someembodiments, before the preposed material 150 is coated, the isolatinglayer 140 may be subjected to a hydrophobic treatment. For example,plasma is adopted to increase a water contact angle of the surface ofthe isolating layer 140 to reduce possibility that a part of solvent mayoverflow in subsequent processes. In some embodiments, the isolatinglayer 140 is not subjected to the hydrophobic treatment.

In FIG. 1E, the first substrate 110 configured with the preposedmaterial P150 may be placed in a replacement solvent 5150, and thereplacement solvent 5150 may be used to replace at least a part of theoriginal ingredients in the preposed material P150. Then, in FIG. 1F,the preposed material P150 containing the replacement solvent 5150 inFIG. 1E may be dried to form a porous structure 150. The porousstructure 150 has a plurality of pores V, and the porosity of the porousstructure 150 may be 20% to 80%. A pore size of the pores V may be about0.05 μm to 10 μm, but the disclosure is not limited thereto. Theporosity of the porous structure 150 may be measured in a desorptionmanner, or may also be measured in other manners known in the art. Thepore size of the pores V may be obtained by measuring the maximum widthof one of the pores V in a cross-sectional view or a top view of a localarea, but the disclosure is not limited thereto. Moreover, since theproposed material P150 exceeding the top surface T140 of the isolatinglayer 140 has been removed during the preceding process of the proposedmaterial P150, a thickness of the final porous structure 150 may beslightly smaller than or substantially equal to the isolating layer 140.Namely, the thickness of the porous structure 150 may be greater than orequal to 1 μm and smaller than or equal to 100 μm (1 μm≤thickness≤100μm).

In the embodiment, a heating step may be adopted to volatilize thereplacement solvent 5150 in the preposed material P150 to obtain thefinal porous structure 150. The heating step may include applying heat Hto the laminated structure by using a heating plate or an oven.Moreover, the replacement solvent 5150 used in FIG. 1E is, for example,a solvent with better volatility, a foaming agent, etc. Therefore, inthe process of volatilizing the replacement solvent 5150, the pores Vmay be generated due to volatilization or expansion of the polymermaterial in the preposed material P150, thereby forming the porousstructure 150. The pores V may present an irregular distribution, butthe disclosure is not limited thereto. In other embodiments, thepreposed material P150 itself may include high volatility ingredientsand low volatility ingredients, and in the process of producing theporous structure 150 from the preposed material P150, it is unnecessaryto perform the step of FIG. 1E. Namely, in the embodiment, after thestep of coating the preposed material P150, the heating step of FIG. 1Fmay be directly performed to obtain the porous structure 150. Even, inother embodiments, the removing step of FIG. 1D may also be omitted, sothat after the step of coating the preposed material P150 of FIG. 1C,the heating step of FIG. 1F is performed to obtain the porous structure150.

In FIG. 1G, light conversion materials M162 and M164 are filled in theporous structure 150. In the embodiment, a method of filling the lightconversion materials M162 and M164 in the porous structure 150 includes,for example, an inkjet method, a dripping method, or other suitablemethods. In the embodiment, after filling the light conversion materialsM162 and M164 in the porous structure 150 by using the inkjet method,the light conversion materials M162 and M164 may be adsorbed in thepores V of the porous structure 150 to form a light conversion unit 160.In this way, the light conversion unit 160 may be dispersed in theporous structure 150 to form a light conversion layer CS.

The light conversion materials M162 and M164 may include, for example, aquantum dot material, such as a cadmium selenide (CdSe) series, anindium phosphide (InP) series, etc., but the disclosure is not limitedthereto. Since the pores V in the porous structure 150 are substantiallydispersed throughout the porous structure 150, the light conversionmaterials M162 and M164 may be filled into the pores V through capillaryadsorption. Therefore, the light conversion unit 160 in the lightconversion layer CS may be dispersed in the porous structure 150 andhas, for example, uniform distribution.

Moreover, the light conversion materials M162 and M164 filled indifferent openings 142 may have different wavelength conversion ranges.To be specific, the wavelength conversion ranges of the light conversionunits 160 in the openings 142 may respectively correspond to the colorsof the color filter patterns 122 disposed between the light conversionunits 160 and the first substrate 110. For example, the color filterpattern 122 includes a red filter pattern 122A, a green filter pattern122B, and a blue filter pattern 122C. An excitation wavelength of alight conversion unit 162 corresponding to the red filter pattern 122Amay be, for example, in a red wavelength range, and an excitationwavelength of a light conversion unit 164 corresponding to the greenfilter pattern 122B may be, for example, in a green wavelength range.Moreover, the porous structure 150 corresponding to the blue filterpattern 122C may be selectively filled with no material, filled with awavelength conversion material, or filled with a filling material 170without a wavelength conversion property. In some embodiments, thefilling material 170 may be transparent adhesive, or may includescattering particles, or other transparent materials. After beingconverted by the light conversion unit 162, a proportion of light in ashort wavelength range (close to a blue wavelength range) that isincident to the red filter pattern 122A is reduced, while a proportionof light in a long wavelength range (close to a red wavelength range) isincreased, which improves the purity or the brightness of red light.Similarly, after being converted by the light conversion unit 164, aproportion of light in the short wavelength range (close to the bluewavelength range) that is incident to the green filter pattern 122B isreduced, while a proportion of light in the long wavelength range (closeto a green wavelength range) is increased, which improves the purity orthe brightness of green light. Moreover, when the porous structure 150corresponding to the blue filter pattern 122C is filled with the fillingmaterial 170 without the wavelength conversion property, light mayremain blue after passing through the filling material 170 and the bluefilter pattern 122C. In this embodiment, the overall color performanceof the electronic device may be improved.

In FIG. 1H, a protective layer 180 may be further formed on the firstsubstrate 110. The protective layer 180 may reduce entry of moistureand/or oxygen to mitigate damaging the light conversion unit 160 in thelight conversion layer CS. The protective layer 180 may be acoating-type moisture barrier layer, or may be a multilayer structureformed by alternately stacking organic layers and inorganic layers, butthe disclosure is not limited thereto. A material of the coating-typemoisture barrier layer includes, for example, siloxane, but thedisclosure is not limited thereto. In addition, in some embodiments, theprotective layer 180 may have a low refractive index, for example, therefractive index is in a range of 1.1 to 1.4 (1.1≤refractive index≤1.4),but the disclosure is not limited thereto.

According to FIG. 1H, it is known that the isolating layer 140 isdisposed on the first substrate 110, and the isolating layer 140 has anopening 142. The porous structure 150 is disposed in the opening 142,and the porous structure 150 has a plurality of pores V arrangedirregularly. The light conversion unit 160 is disposed in the pores V ofthe porous structure 150. The color filter unit 120 is disposed betweenthe first substrate 110 and the porous structure 150. The low refractiveindex layer 130 is disposed between the color filter unit 120 and theporous structure 150. The protective layer 180 is disposed on the porousstructure 150. In some embodiments, the structure of FIG. 1H may beregarded as a color filter substrate, and when it is actually applied toan electronic device, the color filter substrate of FIG. 1H may beattached to another substrate (a second substrate), and light-emittingunits or a display medium may be disposed between the color filtersubstrate and the another substrate to constitute a display panel of adisplay device or the electronic device.

FIG. 1I is a schematic diagram of a part of components of an electronicdevice according to another embodiment of the disclosure. The componentsshown in FIG. 1G are substantially similar to the components in FIG. 1H,and description of the aforementioned embodiment may be referred formanufacturing methods, materials, structures, and properties of thecomponents in FIG. 1I, and details thereof are not repeated.

A main difference between the embodiment and the aforementionedembodiment is that the manufacturing step of the low refractive indexlayer 130A of the embodiment is carried out after the isolating layer140 is manufactured, so that the low refractive index layer 130A coversthe color filter unit 120 and the isolating layer 140. In this way, aside surface and a top surface of the isolating layer 140 may be coveredby the low refractive index layer 130A. However, in other embodiments,the low refractive index layer 130A on the top surface of the isolatinglayer 140 may be partially or completely removed. In addition, theporous structure 150 in one of the openings 142 of the isolating layer140 may be selectively filled with a material without the lightconversion property, such as the filling material 170 shown in FIG. 1G.

FIG. 2A to FIG. 2E are schematic diagrams of a partial manufacturingprocess of an electronic device according to another embodiment of thedisclosure. The step of FIG. 2A may be performed after the step of FIG.1F, so that a structure shown in FIG. 2A is substantially similar to thestructure of FIG. 1F. In FIG. 2A, the color filter unit 120, the lowrefractive index layer 130, the isolating layer 140, the porousstructure 150, and a cover layer 210 are disposed on the first substrate110. To be specific, in the embodiment, for example, after performingthe step of FIG. 1F, the cover layer 210 is formed on the firstsubstrate 110. The cover layer 210 is, for example, a film layer thatmay cover the isolating layer 140 and the porous structure 150.

In FIG. 2B, a first patterned photoresist 220 is formed on the coverlayer 210, and the first patterned photoresist 220 is taken as a mask toremove a part of the cover layer 210. The removing step shown in FIG. 2Bmay partially remove the cover layer 210 until the porous structure 150in one of the openings 142 is exposed. Then, in FIG. 2C, the porousstructure 150 in one of the openings 142 is not covered by the coverlayer 210, and the first substrate 110 and the color filter unit 120,the low refractive index layer 130, the isolating layer 140, the porousstructure 150, the cover layer 210, and the first patterned photoresist220 on the first substrate 110 are placed in the solution of the lightconversion material M164, and the light conversion material M164 isadsorbed in the pores V of the porous structure 150 to form the lightconversion unit 164 in the pores V of the porous structure 150.

Then, as shown in FIG. 2D, a second patterned photoresist 230 is formedon the first substrate 110, and the second patterned photoresist 230 istaken as a mask to remove the cover layer 210 over the other opening142. Before the second patterned photoresist 230 is formed, the firstpatterned photoresist 220 may be selectively stripped, but thedisclosure is not limited thereto. Moreover, the second patternedphotoresist 230 covers the porous structure 150 configured with thelight conversion unit 164 and exposes the porous structure 150 in theother opening 142. Then, in FIG. 2E, the first substrate 110 and thecolor filter unit 120, the low refractive index layer 130, the isolatinglayer 140, the porous structure 150, the cover layer 210, and the secondpatterned photoresist 230 on the first substrate 110 are placed into thesolution of the light conversion material M162, and the light conversionmaterial M162 is adsorbed in the pores V of the porous structure 150 toform the light conversion unit 162 in the pores V of the porousstructure 150. As described in the aforementioned embodiment, the lightconversion unit 162 and the light conversion unit 164 may have differentwavelength conversion ranges. To be specific, a main difference betweenthe embodiment and the aforementioned embodiment lies in themanufacturing method of the light conversion unit 160, but the method ofmaking the light conversion materials M162 and M164 to be adsorbed onthe pores V of the porous structure 150 is not limited to theaforementioned two methods. In other embodiments, other methods in theart that may make the light conversion materials M162 and M164 to beadsorbed on the pores V of the porous structure 150 may also be adoptedto implement the disclosure.

FIG. 3 is a structural schematic diagram of an electronic deviceaccording to an embodiment of the disclosure. Referring to FIG. 3, theelectronic device 300 includes a first substrate 110, an isolating layer140, a porous structure 150, a light conversion unit 160, alight-emitting unit 310, a spacing layer 320, and a filling layer 330.In the embodiment, the spacing layer 320 is disposed on the firstsubstrate 110, and encircles at least a containing region RC. Thelight-emitting unit 310 is disposed on the first substrate 110 and islocated in the containing region RC encircled by the spacing layer 320.In addition, the filling layer 330 is disposed in a space between thelight-emitting unit 310 and the spacing layer 320 and/or a space betweenthe light-emitting unit 310 and the first substrate 110. The isolatinglayer 140 is, for example, located on the spacing layer 320, and theisolating layer 140 may be overlapped with the spacing layer 320 in anormal direction of the first substrate 110. In other words, the opening142 of the isolating layer 140 may correspond to the containing regionRC of the spacing layer 320. The porous structure 150 has a plurality ofpores V arranged irregularly, and the porous structure 150 is disposedin the opening 142 and located above the light-emitting unit 310. Thelight conversion unit 160 is disposed in the pores V of the porousstructure 150 to constitute a light conversion layer CS. A maindifference between the embodiment and the aforementioned embodiment isthat in the embodiment, the light-emitting unit 310 is disposed betweenthe light conversion layer CS and the first substrate 110. In theembodiment, the aforementioned embodiment may be referred formanufacturing methods of the isolating layer 140, the porous structure150, and the light conversion unit 160, and details thereof are notrepeated. In the disclosure, the light-emitting unit 310 may include anorganic light-emitting diode (OLED), an inorganic LED, quantum dots, afluorescent material, a phosphor material, other suitable materials, ora combination of the above materials, but the disclosure is not limitedthereto. The inorganic LED may include a micro LED, a mini LED, or aquantum dot LED (QLED/QDLED), etc., but the disclosure is not limitedthereto. The light-emitting unit 310 may, for example, emit light towardthe light conversion layer CS. A wavelength range of the light emittedby the light-emitting unit 310 may be within an excitation wavelengthrange of the light conversion layer CS. The light emitted by thelight-emitting unit 310 may be converted into light of anotherwavelength range for being emitted from the electronic device 300 afterpassing through the light conversion unit 160 in the light conversionlayer CS.

FIG. 4 is a structural schematic diagram of an electronic deviceaccording to another embodiment of the disclosure. Referring to FIG. 4,the electronic device 400 includes a first substrate 110, an isolatinglayer 140, a porous structure 150, a light conversion unit 160, alight-emitting unit 310, and a spacing layer 320. The spacing layer 320is disposed on the first substrate 110, and the isolating layer 140 isdisposed on the spacing layer 320 to form a double-layered integratedisolating layer 410, where the integrated isolating layer 410 has anopening 412. The porous structure 150 is disposed in the opening 412,and the porous structure 150 has a plurality of pores V arrangedirregularly. The light conversion unit 160 is disposed in the pores V ofthe porous structure 150. In addition, the light-emitting unit 310 isalso disposed in the opening 412, and the porous structure 150 islocated on and beside the light-emitting unit 310. Namely, the porousstructure 150 is disposed in a space between the light-emitting unit 310and the spacing layer 320 and/or a space between the light-emitting unit310 and the first substrate 110, and even contacts at least a part of aside surface of the light-emitting unit 310. It should be noted that theintegrated isolating layer 410 of the embodiment may have a structure orshape of two or more layers according to an actual requirement.

FIG. 5 is a structural schematic diagram of an electronic deviceaccording to still another embodiment of the disclosure. Referring toFIG. 5, the electronic device 500 includes a first substrate 110, anisolating layer 510, a porous structure 150, a light conversion unit 160and a light-emitting unit 310. In the embodiment, the isolating layer510 is disposed on the first substrate 110 and has an opening 512. Thelight-emitting unit 310 is disposed on the first substrate 110 and islocated in the opening 512. The porous structure 150 is also disposed onthe first substrate 110 and is located in the opening 512. The porousstructure 150 is a structure having a plurality of pores V arrangedirregularly, and the light conversion unit 160 is disposed in the poresV of the porous structure 150. In the embodiment, the porous structure150 and the light conversion unit 160 may be manufactured according tothe manufacturing methods of the aforementioned embodiments, and detailsthereof are not repeated. In addition, the isolating layer 510 has anintegrated structure, and may be used to replace the double-layeredintegrated isolating layer 410 in FIG. 4.

FIG. 6 is a structural schematic diagram of an electronic deviceaccording to yet another embodiment of the disclosure. Referring to FIG.6, the electronic device 600 includes a first substrate 110, a colorfilter unit 120, a low refractive index layer 130, an isolating layer140, a porous structure 150, a light conversion unit 160, a protectivelayer 180, a second substrate 610, a light-emitting unit 620, a spacinglayer 630, an adhesive layer 640, etc. In the embodiment, the firstsubstrate 110, the color filter unit 120, the low refractive index layer130, the isolating layer 140, the porous structure 150, the lightconversion unit 160, and the protective layer 180 may constitute a colorfilter substrate CF. The second substrate 610, the light-emitting unit620, and the spacing layer 630 may constitute a light-emitting substrateLE. In addition, the color filter substrate CF may be attached to thelight-emitting substrate LE through the adhesive layer 640, where theadhesive layer 640 may include optical adhesive (optical clear resin oroptical clear adhesive), hydrogel, or other similar materials. It shouldbe noted that although the adhesive layer 640 also contacts thelight-emitting unit 620 in the embodiment shown in FIG. 6, in someembodiments, a material different from the adhesive layer 640 may alsobe adopted for the part located around the light-emitting unit 620 andin contact with the light-emitting unit 620.

In the embodiment, the color filter unit 120 includes color filterpatterns 122 and a black matrix 124, and the light conversion unit 160includes at least two different light conversion units 162 and 164. Tobe specific, the first substrate 110, the color filter unit 120, the lowrefractive index layer 130, the isolating layer 140, the porousstructure 150, the light conversion unit 160, and the protective layer180 are similar to the structure disclosed in the aforementioned FIG.1H, so that description of the aforementioned embodiment may be referredfor a stacking relationship, manufacturing methods and materials of theabove components, and details thereof are not repeated. Wavelengthconversion ranges of the light conversion units 162 and 164 are relatedto the corresponding color filter patterns 122. For example, the colorfilter pattern 122 corresponding to the light conversion unit 162 is,for example, a red filter pattern 122A, and the color filter pattern 122corresponding to the light conversion unit 164 is, for example, a greenfilter pattern 122B, so that a light-emitting wavelength range of theexcited light conversion unit 162 is, for example, within the redwavelength range, and a light-emitting wavelength range of the excitedlight conversion unit 164 is, for example, within the green wavelengthrange. In this way, after the conversion of the light conversion unit162, a proportion of light in the short wavelength range (close to theblue wavelength range) that is incident to the red filter pattern 122Ais reduced, while a proportion of light in the long wavelength range(close to the red wavelength range) is increased, which improves purityor brightness of red light. Similarly, after the conversion of the lightconversion unit 164, a proportion of light in the short wavelength range(close to the blue wavelength range) that is incident to the greenfilter pattern 122B is reduced, while a proportion of light in the longwavelength range (close to the green wavelength range) is increased,which improves purity or brightness of green light. Moreover, the colorfilter pattern 122 may further include a blue filter pattern 122C, andthe porous structure 150 corresponding to the blue filter pattern 122Cmay be selectively filled with no material, filled with a wavelengthconversion material, or filled with a filling material 170 without awavelength conversion property. For example, when the light-emittingunit 620 corresponding to the blue filter pattern 122C emits whitelight, the white light passes through the wavelength conversion materialin the porous structure 150 and is converted into blue light, and thenthe blue light passes through the blue filter pattern 122C to improvethe purity or brightness thereof; or when the light-emitting unitcorresponding to the blue filter pattern 122C emits blue light, and theporous structure 150 is filled with the filling material 170 without thewavelength conversion property, the blue light may remain blue afterpassing through the filling material 170, and purity or brightness ofthe blue light may be increased after the blue light passes through thecolor filter pattern 122. In overall, through the aforementionedarrangement of the color filter pattern 122 and the light conversionunit 160, color performance of the electronic device 600 may beimproved.

The light-emitting unit 620 and the spacing layer 630 are disposed onthe second substrate 610. The spacing layer 630, for example, has agrid-like pattern, and encircles at least a containing region RC. Thelight-emitting unit 620 is located in the containing region RC encircledby the spacing layer 630. The adhesive layer 640 is disposed in a spacebetween the light-emitting unit 620 and the spacing layer 630 and coversthe spacing layer 630 to attach the first substrate 110 and the secondsubstrate 610. A wavelength range of the light emitted by thelight-emitting unit 620 may correspond to an excitation wavelength rangeof the light conversion unit 160. Therefore, the light emitted by thelight-emitting unit 620 may be converted by the light conversion unit160 and emitted out of the electronic device 600 in another wavelengthrange. In the embodiment, the light emitted by the light-emitting unit620 is, for example, blue light, but the disclosure is not limitedthereto. The light conversion unit 160 of the embodiment is dispersed inthe pores V of the porous structure 150. Therefore, the light conversionunit 160 helps to improve quality or uniformity of the electronic device600.

FIG. 7 is a structural schematic diagram of an electronic deviceaccording to still another embodiment of the disclosure. In FIG. 7, theelectronic device 700 includes a first substrate 110, a color filterunit 120 having color filter patterns 122 and a black matrix 124, a lowrefractive index layer 130, an isolating layer 740, a porous structure150, a light conversion unit 160, a protective layer 180, a secondsubstrate 710, a light-emitting unit 720, and an adhesive layer 730,where the aforementioned embodiments may be referred for relativeconfiguration relationships, materials, manufacturing methods, etc., ofthe first substrate 110, the color filter unit 120, the low refractiveindex layer 130, the porous structure 150, the light conversion unit 160and the protective layer 180, and details thereof are not repeated.Moreover, the isolating layer 740 is substantially similar to theisolating layer 140 described in the aforementioned embodiment, but athickness T740 of the isolating layer 740 of the embodiment is greaterthan the thickness T150 of the porous structure 150. In addition, thelight-emitting unit 720 is disposed on the second substrate 710, and thesecond substrate 710 may be attached to the first substrate 110 throughthe adhesive layer 730. The adhesive layer 730 may be disposed in aspace between the light-emitting unit 720 and the second substrate 710and/or a space between the light-emitting unit 720 and the protectivelayer 180.

As shown in FIG. 7, the color filter unit 120, the low refractive indexlayer 130, the porous structure 150, the light conversion unit 160, andthe protective layer 180 are disposed on the first substrate 110, andthe thickness T740 of the isolating layer 740 is greater than thethickness T150 of the porous structure 150. In other words, theisolating layer 740 protrudes toward the second substrate 710 withrespect to the porous structure 150. A material of the isolating layer740 may be similar to that of the isolating layer 140 described in theaforementioned embodiment. Therefore, the isolating layer 740 may reducelight penetration or may selectively reflect light. In this way, theisolating layer 740 may mitigate interference of the light emitted fromthe adjacent light-emitting units 720. In addition, in the embodiment,the light-emitting properties and/or optical characteristics of thelight conversion unit 160, the color filter pattern 122, and thelight-emitting unit 720 may be as that described in the aforementionedembodiments, so that the a light-emitting effect of the electronicdevice 700 may be improved.

In summary, in the electronic device of the disclosure, the lightconversion unit is dispersed in the pores of the porous structure.Therefore, dispersity of the light conversion unit may be improved,which helps improving the light conversion effect or the quality of theelectronic device. In addition, by forming the porous structure in theelectronic device to adsorb the light conversion material, it isunnecessary to adjust or change the raw materials of a solvent in orderto produce the light conversion unit, thereby mitigating the problem ofuneasy producing of the conventional light conversion material.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the disclosed embodimentswithout departing from the scope or spirit of the disclosure. In view ofthe foregoing, it is intended that the disclosure covers modificationsand variations provided they fall within the scope of the followingclaims and their equivalents. Also, the features may be replaced,rearranged, or combined among the embodiments provided that they do notdepart from the spirit of the disclosure or result in conflict.

What is claimed is:
 1. An electronic device, comprising: a firstsubstrate; an isolating layer, disposed on the first substrate, andhaving an opening; a porous structure, disposed in the opening, andhaving a plurality of pores arranged irregularly; and a light conversionunit, disposed in the porous structure.
 2. The electronic device asclaimed in claim 1, wherein a thickness of the porous structure isgreater than or equal to 1 μm and less than or equal to 100 μm.
 3. Theelectronic device as claimed in claim 1, further comprising a colorfilter unit disposed between the first substrate and the porousstructure.
 4. The electronic device as claimed in claim 3, furthercomprising a low refractive index layer disposed between the colorfilter unit and the porous structure.
 5. The electronic device asclaimed in claim 4, comprising a second substrate and a light-emittingunit, wherein the light-emitting unit is disposed on the secondsubstrate, and the first substrate is attached to the second substrate.6. The electronic device as claimed in claim 4, wherein a side surfaceand a top surface of the isolating layer are covered by the lowrefractive index layer.
 7. The electronic device as claimed in claim 1,further comprising a protective layer disposed on the porous structure.8. The electronic device as claimed in claim 1, comprising alight-emitting unit disposed in the opening.
 9. The electronic device asclaimed in claim 8, wherein the porous structure contacts at least apart of a side surface of the light-emitting unit.
 10. The electronicdevice as claimed in claim 8, further comprising a spacing layer,wherein the spacing layer is disposed on the first substrate and theisolating layer is disposed on the spacing layer.
 11. The electronicdevice as claimed in claim 10, wherein the light-emitting unit islocated in a containing region encircled by the spacing layer.
 12. Theelectronic device as claimed in claim 10, wherein the porous structureis disposed between the light-emitting unit and the spacing layer. 13.The electronic device as claimed in claim 1, wherein the lightconversion unit comprises a plurality of quantum dot particles.
 14. Theelectronic device as claimed in claim 1, wherein a pore size of thepores of the porous structure is 0.05 μm to 10 μm.
 15. The electronicdevice as claimed in claim 1, wherein a porosity of the porous structureis 20% to 80%.
 16. An electronic device, comprising: a substrate; alight conversion layer, disposed on the substrate, and comprising aporous structure and a light conversion unit, wherein the porousstructure has a plurality of pores, and the light conversion unit isdispersed in the pores; and a light-emitting unit, disposed between thelight conversion layer and the substrate.
 17. The electronic device asclaimed in claim 16, wherein the porous structure contacts at least apart of a side surface of the light-emitting unit.
 18. The electronicdevice as claimed in claim 16, wherein the light conversion unitcomprises a plurality of quantum dot particles.
 19. The electronicdevice as claimed in claim 16, wherein a pore size of the pores of theporous structure is 0.05 μm to 10 μm.
 20. The electronic device asclaimed in claim 16, wherein a porosity of the porous structure is 20%to 80%.